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| Differential Magneto Resistor FP 412 D 250 Dimensions in mm Features * * * * * * Accurate intercenter spacing High operating temperature range High output voltage Signal amplitude independent of speed Compact construction Available in strip form for automatic assembly Typical applications * * * * * Detection of speed Detection of position Detection of sense of rotation Angular encoders Linear position sensing Type FP 412 D 250 Ordering Code Q65412-D 250 Semiconductor Group 1 07.96 FP 412 D 250 The differential magneto resistor FP 412 D 250 is a magnetically variable resistor in Dtype InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of each of the magneto resistors is 250 . The series coupled MRs are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Maximum ratings Parameter Operating temperature Storage temperature Power Supply dissipation1) voltage2)(B = 0.2 T) Symbol Value - 40 / +175 - 40 / +185 1000 12 25 1 Unit C C mW V mW/K mW/K TA Tstg Ptot VIN Gth case Gth A Thermal conductivity -attached to heatsink -in still air Characteristics (TA = 25 C) Basic resistance (I 1 mA, B = 0 T) Center symmetry3) Relative resistance change (R0 = R01-3, R04-6 at B = 0 T) B = 0.3 T4) B=1T Temperature coefficient B=0T B = 0.3 T B=1T R01-3 M RB/R0 370...630 10 % > 2.8 > 12 - - %/K %/K %/K TCR - 1.8 - 2.7 - 2.9 1) Corresponding to diagram Ptot = f(Tcase) 2) Corresponding to diagram VIN = f(Tcase) 3) M R 01 - 2 - R 02 - = -------------------------------3x 100% for R01-2 > R02-3 R 01 - 2 4) 1 T = 1 Tesla = 104 Gauss Semiconductor Group 2 FP 412 D 250 Max. power dissipation versus temperature Ptot = f(T), T = Tcase, TA Maximum supply voltage versus temperature VIN = f(T), B = 0.2 T T = Tcase, TA Typical MR resistance versus temperature R1-3 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R1-3 = f(B), TA = 25 C Semiconductor Group 3 |
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